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Origin of steps in magnetization loops of martensitic Ni-Mn-Ga films on MgO(001)

机译:MgO(001)上马氏体Ni-Mn-Ga薄膜磁化回路中台阶的起源

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摘要

We study the temperature dependent magnetization properties of (010)-oriented Ni-Mn-Ga epitaxial films on MgO(001) substrates. In the martensitic phase, we observe pronounced abrupt slope changes in the magnetization loops for all studied samples. Our experimental findings are discussed in conjunction with the micromagnetic simulations, revealing that the characteristic magnetization behavior is governed solely by the magnetization switching within the specific martensitic variant pattern, and no reorientation of twin variants is involved in the process. Our study emphasizes the important role of the magnetostatic interactions in the magnetization behavior of magnetic shape memory alloy thin films.
机译:我们研究了MgO(001)衬底上(010)取向的Ni-Mn-Ga外延膜的温度依赖性磁化特性。在马氏体相中,我们观察到所有研究样品的磁化回路都有明显的陡峭变化。我们的实验结果结合微磁模拟进行了讨论,揭示了特征磁化行为仅由特定马氏体变体模式内的磁化转换控制,并且在该过程中不涉及孪生变体的重新定向。我们的研究强调静磁相互作用在磁性形状记忆合金薄膜的磁化行为中的重要作用。

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